Abstract
The performance of a p-channel FinFET comprising a heterogeneous silicon (Si) and silicon-germanium (Si0.9Ge0.1) channel region is evaluated using three-dimensional TCAD simulations and benchmarked against a conventional p-channel Si FinFET. The results show that the hetero-channel design provides for larger ON-state current while maintaining comparable electrostatic integrity as the conventional design due to the valence band offset between Si0.9Ge0.1 and Si. The enhanced performance is achieved with a relatively low Ge mole fraction (10%) in the channel region for ease of manufacture. Therefore, the hetero-channel FinFET is promising for future low-power applications.
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