Abstract
Present work reports the simulation based analysis of SiC temperature sensors based on schottky diode within temperature limit from 100 K to 400 K. The forward bias characteristics of Ni/SiC Schottky diode are simulated using Silvaco TCAD software. The variation in on-voltage with temperature has been extracted and plotted on the basis of current voltage features of forward bias. Thereafter the sensitivity of the designed structure has been determined and plotted as function of measurement current levels. It was found that device works well in the mentioned temperature range which attests its suitability in harsh environments. The findings of the work have been described in terms of thermionic emission current flow mechanism in the device.
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