Abstract
One of the major implementations of wide bandgap semiconductors is in harsh environments like in radiative and extreme temperatures, which owes to their superior physical and electrical properties. The loss of energy within the device at high power levels, in high radiation fluence environments leads to rise in its temperature. Moreover, temperature is the main parameter which infer with the performance and dependability of the semiconductor gadgets. So, the main objective of the present work is to investigate the features of forward and the reverse bias of field plate edge terminated GaN-based Schottky diodes. The features of reverse and forward bias of the device have been simulated using TCAD software at a range of temperature from 100 K to 600 K. The observed characteristics have been explained in terms of current conduction mechanism in the device.
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