Abstract
A new optical proximity effect correction (OPC) method adaptive for device fabrication has been developed, focusing on the evaluation method of printed images through simulation. The evaluation procedure of this method is consist of not only measurement of edge placement error of the printed image but analysis of the shape of the printed image. Automatic correction which is flexible for various pattern shapes is available, and distortion via overcorrection is prevented. By using this method for 0.28 µ m static random access memory (SRAM) poly-Si patterns, an excellent distortion-free printed image adequate for actual device fabrication processing has been obtained with simple mask patterns. The SRAM cell size was reduced to as small as 5 µ m2.
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