Abstract
C/V doping profiles are simulated through n-type multilayer structures containing heterojunctions. The perceived doping profile obtained from C/V measurements can differ markedly from the actual carrier profile in the vicinity of a hetero- or homojunction. The model is applied to conventional FET structures, high-electron-mobility transistors and superlattices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEE Proceedings I Solid State and Electron Devices
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
