Abstract
This paper presents the finite element analysis (FEA) simulation results and electrostatic characterizations of an uncooled MEMS capacitive IR detector. Thermal, thermalstructural and electrostatic-structural behaviors were simulated. The peak displacement sensitivities were calculated as 0.109nm/pW·µm−2 and 0.029nm/pW·µm−2 for 100µm and 50µm plates, respectively. Electrostatic-structural pull-in behaviors of the devices were tested and the results agreed with simulation well when second order mode pull-in was considered in the FEA model.
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