Abstract
The paper presents the design, simulation, and comparison of capacitance-voltage (CV) characteristics for the boron nitride (BN) nanotubes and tungsten disulfide (WS2) nanotubes as gate dielectrics based MOS capacitor. The stack capacitances, flat band voltage, and threshold voltage of these devices were obtained for varying temperatures between 100 K to 500 K. Materials and methods: The two MOS capacitors structured as Au/BN/nSi and Au/WS2/nSi. These devices are designed and simulated using a multi dielectric energy band diagram tool. The sample size for the two MOS structures have been done and a total of 42 samples collected. The stack capacitances and gate charges for voltage ranging between -5 V to +5V were obtained, tabulated, and plotted.
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