Simulation and Comparative Analysis Between MOSFET and FinFET Based Digital Circuits

Abstract

Any applications would prefer to have the circuits which are of high speed and consumes less power. To meet these requirements, the scaling of the circuits which are generally designed using Metal Oxide Semiconductor Field Effect Transistors (MOSFET) is done. Too much scaling down of the transistors or the integrated circuits (IC) affects the channel of the transistors causing Short Channel Effects (SCEs) which in turn affecting the reliability and performance of the circuits. To avoid this issue, a substitute of MOSFET known as Fin Field Effect Transistors (FinFE T) is used in the circuits. This helps to reduce the scaling needed and also has the better performance than the MOSFETs. This work demonstrates the advantageous performance of the FinFE Ts by implementing some of the basic building blocks of the digital circuits such as Inverter, NAND gate, NOR gate, a combinational circuit like Full Adder and a sequential circuit like SR Flip Flop. The designs are simulated using HSPICE tool at 45 nm technology. The parameters such as static power dissipation, dynamic power dissipation, rise time and fall time are examined through waveforms. The circuits with MOSFETs have the higher values from the parameters than the circuits with FinFETs.