Simulation and characterization of short-channel organic thin-film transistors fabricated using ink-jet printing and an imprint process

Abstract

The authors fabricated short-channel organic thin-film transistors (OTFTs) on a polyethersulphone substrate using ink-jet printing combined with an imprint method. 6,13-bis(triisopropylsilylethynyl)pentacene and polyvinyl alcohol were used as an active material and a gate insulator, respectively, in the OTFT fabrication. The channel length was reduced remarkably by interfacing ink-jet printing with imprint technology. The authors obtained an OTFT mobility of approximately 0.25 cm2/V s in the saturation region, and the OTFT threshold voltage was approximately −2.5 V. The results were compared with the simulated results to understand the variations in the device structure and material properties.