Abstract
In this paper we simulate and analyze a sample of slow light semiconducting device with quantum dot structure based on coherent population oscillation (CPO). The simulation is conducted to enhance the main parameters of slow light device and a method is presented for setting the output specifications of this kind of devices. In this paper, we deal with changing the size of quantum dot to find the ideal size. The simulation results indicate that as the size of quantum dot changes properly (with reducing more than 50 percent of quantum dots both radius and height), then the slope of diagram of the real part of refractive index increases significantly so that the Slow Down Factor (SDF) predicted to be18 times greater. Analysis and simulations based on cylinderical quantum dots structure slow light devices based on exitonic cpo.
Highlights
Slow light attracted significant attentions to itself as a method to control significantly light velocity [1]
If the wave is mono color or mono-frequency, the wave will release with phase speed in the environment, but if the wave isn’t mono-frequency, the wave will be released with group velocity, which is calculated from the following equation: [2]
It should be noted that Coherent population Oscillation (CPO) with quantum well structure is similar to CPO with quantum dot structure, the difference is that exciton is Trapped in a 3-D cell
Summary
Slow light attracted significant attentions to itself as a method to control significantly light velocity [1]. The vigorous changes in refractive index compared with frequency are used to decrease the light velocity or achieve slow light. Slow light has been tested successfully in quantum wells and dots in low temperature by using cpo [1] [6]. Semiconductor slow light devices with quantum well or dot structure control light velocity by using the life time of exciton and they decrease significantly group velocity by creating a steep slope in refractive index diagram. In this paper we simulate a slow light quantum dots device In0.25Ga0.75 As / GaAs based on cpo and examine the effects of radius and height on the device’s parameters. The results of the paper are usable for all quantum dot devices based on cpo
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
