Abstract
In this paper we analyze the structure of two types of quantum dots slow light devices. The first model is slow light devices based on coherent population oscillation (CPO), in this method, slow light device has a pump and signal, the simulation results in the form of curves with refractive index, absorption and slow down factor based on detuning changes is estimated. In the second model, with tunneling induced transparency (TIT) method, slow light device has an electric voltage. The simulation results in the form of curves with refractive index, absorption and Vg/C based on alteration photon energy is plotted. For better comparison with CPO method, in the next step, SDF curve is plotted for slow light device based on TIT. According to this figure, it can be realized that the amount of SDF for slow light using TIT are much higher than the amount of SDF for slow light using CPO. And finally we obtained maximum SDF variations as a function of radius of quantum dots, for both methods. According to this curve, when radius is 4 nm, SDF with slow light device based on TIT, 76 times higher than SDF with slow light device based on CPO and it can be noticed that the maximum SDF and radius of quantum dots, has reverse proportion.
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