Abstract
2D numerical simulation of normally-off 4H-SiC Trenched and Implanted VJFET is performed using Sentaurus TCAD simulator. Transport equations and different physical models are employed for exploring the device characteristics. Dynamic and static characteristics are simulated under various channel widths (0.81-0.93μm, step 0.03μm). At a channel width of 0.93μm, forward drain current of 5.77 A is observed which corresponds to specific on-state resistance of 0.328 mΩ.cm2. The device is capable of blocking voltage up to 850V with leakage current of the order of 10-7 A. The switching times and energy losses are extracted from switching waveforms. The turn-on and turn-off times of 3 and 9ns are recorded at RT. Furthermore, the turn-on energy of 1.8μJ and turn-off energy of 5.4μJ are also calculated at RT.
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