Research on Performance Comparisons of SiC MOSFET, CoolMOS, and Si MOSFET Based on H-Bridge Double-Sided LCC Resonant Network

Abstract

Silicon carbide (SiC) MOSFET is a new type of high voltage power switching device, featuring by low on-state resistance and fast switching speed. In recent years, it has received extensive research and application due to its prominent advantages of high temperature and high frequency, the comparisons and analysis of switching characteristic of SiC MOSFET and traditional silicon (Si) MOSFET is of great importance. In this paper, a test platform based on H-Bridge double-sided LCC ZVS resonant network is presented. The switching waveforms, switching time, turn-off voltage change rate (dv/dt), turn-on current change rate (di/dt), turn-off spike voltage, switching energy loss of SiC MOSFET, Si CoolMOS and Si MOSFET were compared and analyzed. Finally, the system efficiency and the temperature rise of the heat sink are compared using three kinds of MOSFET under the same output power and environment temperature. Experimental results show that SiC MOSFET switching time is the shortest and the turn-off voltage is small, the energy loss is the lowest under the same test environment.