Simulation and Analysis of 11T SRAM Cell for IoT-Based Applications

Abstract

AbstractThe rapid growth in e-marketing demands the IoT (Internet of things)-based devices, which interconnect several devices to each other and can efficiently operate on ultra-low-power supply voltage. In this context, an 11T static random access memory (SRAM) cell has been simulated on the Cadence Virtuoso tool on a 45 nm technology file. The obtained simulated results are analyzed and compared with conventional 6T and read decoupled 8T SRAM cells with varying the supply voltages from 0.6 to 1 V. As a consequence, excellent results have been observed in terms of write power, write ability, and read delay of 11T SRAM cell as compared to considered SRAM cells. It is observed that read power dissipation in the 11T SRAM cell is decreased by 1.10× as compared to the conventional 6T SRAM cell. Furthermore, write power dissipation is decreased by 1.05×/ 3.38× as compared to conventional 6T and RD 8T SRAM cells. The write ability of the 11T SRAM cell also improved by 1.17×/1.1× as compared to conventional 6T and RD 8T SRAM cells at 0.6 V supply voltage. The write delay of 11T SRAM is 2.91× improved as compared to the conventional 6T SRAM cell.KeywordsIoTSRAMRead/write powerRead/write stabilityRead/write delay