Abstract
Simulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial resolution. With a high-Z layer that down-converts incident photons on top of a silicon detector, this design has increased absorption efficiency without sacrificing spatial resolution. Simulation results elucidate the relationship between the thickness of each layer and the number of photoelectrons generated. Further, the physics behind the production of electron-hole pairs in the silicon layer is studied via a second model to shed more light on the detector’s functionality. Together, the two models provide a greater understanding of this detector and reveal the potential of this novel form of X-ray detection.
Highlights
The first category is direct detection where the X-ray photon is absorbed directly in the silicon resulting in electron-hole pairs (EHPs) that are collected and read out by the sensor
A second category is indirect detection where the X-ray photon is absorbed by a scintillating material layer and converted into many photons of lower energy, typically in the visible wavelength range
These photons pass into a pixelated semiconductor detector where they generate EHPs like in a visible-light image sensor such as a charge-coupled device (CCD) or CMOS image sensor (CIS)
Summary
X-ray imaging with silicon and other semiconductors can be broadly divided into two categories. A second category is indirect detection where the X-ray photon is absorbed by a scintillating material layer and converted into many photons of lower energy, typically in the visible wavelength range These photons pass into a pixelated semiconductor detector where they generate EHPs like in a visible-light image sensor such as a charge-coupled device (CCD) or CMOS image sensor (CIS). Sensors 2021, 21, 7566 another purpose of this paper is to provide a description of the modeling pro be useful to other sensor designers
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