Abstract
This particular work has been designed to give an idea regarding W shaped nano based type II heterostructure and for the above particular design simulation concept have also been carried out in a theoretical way to obtain optical gain for the given material system InAlAs/InGaAs/GaAsSb, which is used to be operated at 1.55 µm near IR. The designed heterostructure contains two quantum wells (width ∼ 2 nm) of InGaAs material. To solve the carrier’s localities within the heterostructure, k.p method has been adopted. As far as calculations are concerned we have opted a defined phenomena to measure the significant characteristics with respective to optical nature like dispersion, gain and many other properties have also been found in order to get good results that would be helpful to emit radiations of the order of the working wavelength and to employ great communication systems applications that can be optical fiber based
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