Abstract
This paper reports theoretical simulation of optical gain achieved at 1.30 µm in the type-I InGaAsN/GaAs nano-scale heterostructure having active region of width ∼ 40 Å. In addition, the modal gain, behaviour of differential gain and anti-guiding factor of the heterostructure is also simulated and reported. From simulation results, it is concluded that the proposed InGaAsN/GaAs heterostructure can produce the maximum optical gain ∼2100/cm at 1.30 µm.
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