Abstract
Defect engineering is essential for the production of high-performance silicon photovoltaic (PV) devices with cost-effective solar-grade Si input materials. Phosphorus diffusion gettering (PDG) can mitigate the detrimental effect of metal impurities on PV device performance. Using the Impurity-to-Efficiency (I2E) simulator, we investigate the effect of gettering temperature on minority carrier lifetime while maintaining an approximately constant sheet resistance. We simulate a typical constant temperature plateau profile and an alternative “volcano” profile that consists of a ramp up to a peak temperature above the typical plateau temperature followed by a ramp down with no hold time. Our simulations show that for a given PDG process time, the “volcano” produces an increase in minority carrier lifetime compared to the standard plateau profile for as-grown iron distributions that are typical for multicrystalline silicon. For an initial total iron concentration of 5×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> , we simulate a 30% increase in minority carrier lifetime for a fixed PDG process time and a 43% reduction in PDG process cost for a given effective minority carrier lifetime while achieving a constant sheet resistance of 100 Ω/□.
Submitted Version (
Free)
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
