Abstract
The electrical conductivity of a Si QD layer was investigated by using secondary ion mass spectrometry (SIMS). The low electrical conductivity was estimated from the charging effect in SIMS depth profiling of a Si QD layer. However, the charging effect of the Si QD layer was disappeared by introduction of poly crystalline Si interlayers, which indicates the improvement of electrical conductivity of the Si QD layer. Copyright © 2014 John Wiley & Sons, Ltd.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
