Abstract
A secondary ion mass spectrometry (SIMS) study has been carried out during ion beam deposition of 10–100 eV CH 3 + or CD 3 + ions on a Si(111) substrate using a highly sophisticated low-energy ion beam deposition (IBD) apparatus combined with surface analysis systems. Secondary hydrocarbon ions containing up to five carbon atoms were observed to be produced. Results obtained with CD 3 + ions showed that both ion deposition and secondary ion formation processes are different above and below an incident ion energy of 30 eV.
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