Fragmentation of molecular compounds on silicon wafers and low dielectric constant materials studied by time‐of‐flight secondary ion mass spectrometry using a polyatomic ion source

Abstract

AbstractRecent time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) studies using primary cluster ion sources such as Aun+, SFn+, Bin+ or C60+ have shown polyatomic ions to be more appropriate for the detection of high mass molecular secondary ions than monoatomic ion sources like Ga+, thanks to secondary ion yield and ion formation efficiency enhancements.This work is part of a study aiming at improving molecular compound quantification at the surface of microelectronics industry substrates by taking advantage of a polyatomic ion source in ToF‐SIMS analysis. It focuses on the case of a phthalate‐related contamination. Fundamental parameters like secondary ion yield, damage cross section and secondary ion efficiency were studied as a function of the size and the energy of the primary ions. The substrate composition influence on the ToF‐SIMS results was also studied by comparing several substrates of interest in the microelectronics industry such as silicon wafers and low dielectric constant materials SiOxCyHz.Phthalate‐related secondary ions detected at the surface of the contaminated surfaces were compared and a fragmentation pathway of the di‐isononyl phthalate (DNP) molecule was determined. A drastic improvement of the secondary ion yield was provided when using a polyatomic ion source. Furthermore, a clear increase in damage cross section was observed as a function of the secondary ion size for a given Bin primary ion as well as an increase for a given fragment as a function of the number of Bi atoms in the Bin aggregate. This led to a lower static limit when taking into account higher phthalate fragments and primary ions of larger size. Copyright © 2008 John Wiley & Sons, Ltd.