Abstract
The results of secondary ion mass spectrometry (SIMS) depth profile analysis of free-standing Al/Si and Zr/ZrSi2 multilayer films by a TOF.SIMS-5 instrument are reported for the first time. A prestudy of elemental composition in Zr and ZrSi2 single layers and Zr/ZrSi2 multilayer films deposited on Si substrates with sublayers revealed enhanced diffusion of carbon in Zr layers. Ion sputtering and charge neutralization conditions were determined to provide fixed position of free-standing thin films during analysis. An elemental composition of 100-nm-thick Zr/ZrSi2 multilayer structures with Mo and B4C protective layers was measured prior and after laser annealing.
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