SIMS and RBS study of thermally annealed Pd/β-SiC interfaces

Abstract

The Pd/β-SiC interfaces were studied using secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS). This was done with the intent of clarifying any reaction or inter-diffusion at the interface upon prolonged annealing at different temperatures in air. SIMS study indicates that the interface is stable up to 400 °C for at least 12 h. However, at 800 °C, the interface was completely degraded with significant inter-diffusion of palladium and silicon. The RBS study confirms the SIMS observations.