Abstract
We present an easy but effective method to extract the four parameters of the simplified Enz–Krummenacher–Vittoz (sEKV) MOSFET model. The procedure, which is based on direct lateral optimization, is tested using measurements from experimental polycrystalline silicon Thin Film Transistors (TFTs) of various channel lengths and widths. We demonstrate that this basic MOSFET model is able to reasonably describe the saturation transfer characteristics of these polysilicon TFTs. Furthermore, we evaluate the computational adeptness for extracting the four sEKV parameters of the lateral optimization fitting procedure as compared to the more traditional vertical optimization one.
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