Abstract
The BaSi2 semiconductor has excellent optoelectronic properties for solar cell applications and consists of earth-abundant elements. In this study, we have investigated the thin film growth of BaSi2 by a simple vacuum evaporation technique. It is shown by X-ray diffraction that single-phase BaSi2 films can be formed at high substrate temperatures of 500 and 600 ˚C on either Si(111) or EAGLE XG glass substrate. The film growth mechanism is discussed on the basis of the transmission electron microscopy observation and energy-dispersive X-ray spectra of the film and the residue of evaporation source. It is concluded that high substrate temperatures are needed to remove excess Ba atoms and to eliminate a composition gradient. In addition, suitable optical properties for solar cell applications are revealed by analyzing the transmittance and reflectance spectra.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
