Abstract
Estimating junction temperature during the operation of power semiconductors is essential to avoid damage and to increase lifetime. However, published literature usually presents complex solutions to determine temperature rise. These require parameters that are not available in datasheets. Nevertheless, there is usually no additional information available for the design stage. This study introduces a simple method to determine device junction temperature of half-bridge modules using only datasheet parameters and the ambient temperature. This paper presents results from the proposed circuit design undertaken in the simulation environment PSIM and the simulation tool Semisel. The results are validated with a DC-DC converter operating up to 6.5 kW. The results show that the proposed model can predict temperature rise with a maximum deviation of 5.5%.
Published Version
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