Abstract
Simple technique for determining the refractive index of phase-change materials using near-infrared reflectometry
Highlights
Novel device technologies based on the use of chalcogenide phase-change materials (PCMs), whose refractive index can be controlled on-demand, are currently the subject of many fascinating research trends [1,2,3,4]
Our analyses have been performed over thin films made of two different and very widely employed PCM compositions, namely Ge2Sb2Te5 (GST) and GeTe, working in the near infrared region of the spectrum
Our proposed method to obtain the n and k values of PCM thin films is based around the uniqueness of the FP key features in the reflectance spectrum, which restricts the possible acquisition of multiple fitting solutions due to the lack of phase information
Summary
Novel device technologies based on the use of chalcogenide phase-change materials (PCMs), whose refractive index can be controlled on-demand, are currently the subject of many fascinating research trends [1,2,3,4] These include PCM-based reconfigurable reflective displays [1,3], tuneable filters [2], perfect absorbers/modulators [4], devices for active wavefront shaping [5], and integrated phase-change photonic memories and processors [6,7,8]. This is in addition to the use of PCMs in more conventional non-volatile optical (and electrical) memories (see e.g., [9,10]). Our analyses have been performed over thin films made of two different and very widely employed PCM compositions, namely Ge2Sb2Te5 (GST) and GeTe, working in the near infrared region of the spectrum (which is important for many emerging nanophotonic applications of PCMs (see e.g., [2,3,4,5,6,7,8])
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