Abstract

We present a method to enact a deterministic, measurement-free, optically generated controlled-phase gate on two qubits defined by single electrons trapped in large-area quantum dots in a planar microcavity. This method is tolerant to optical quantum dot inhomogeneity, requires only a modest-$Q$ planar cavity, employs only a single laser pulse, and allows the integration of many entangled qubits on one semiconductor chip. We present the gate in the contexts of both adiabatic evolution and geometric phases, and calculate the degradation of performance in the presence of both spontaneous emission and cavity loss.

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