Simple processed semi-transparent Schottky diode based on PMMA-MWCNTs nanocomposite for new generation of optoelectronics

Abstract

• MWCNTs-PMMA/FTO semi-transparent Schottky diode is fabricated using convective self-assembly. • MWCNTs-PMMA exhibits UV and Visible light absorption. • A significant sensitivity of MWCNTs-PMMA/FTO diode to UV illumination intensity is evaluated. • The present architecture shows a good enhancement in the efficiency of the semi-transparent photodetectors. Herein, a semi-transparent Schottky diode based on poly (methyl methacrylate), PMMA, doped multiwall carbon nanotubes, MWCNTs/FTO is fabricated by a convective self-assembly method. The analyzed spectrophotometric optical transmittance profile of FTO/PMMA-MWCNTs/carbon device showed its maximum transparency of 62% at wavelength ˜ 472 nm. The values of direct as well as indirect energy gap are calculated by using absorption spectrum fitting (ASF) method and found to be in semiconducting range with values ˜ 3.21, and 2.78 eV, respectively. The estimated microelectronic parameters of FTO/PMMA-MWCNTs/carbon device has an ideality factor equal to one ( n = 1) and barrier height alters between 0.63 and 0.75 eV. The highest power conversion efficiency ( PCE ) that is achieved by the present architecture is about 5.64% at 12 mW/cm 2 . The fabricated FTO/PMMA-MWCNTs/carbon shows a Schottky and photovoltaic characteristics with semitransparency properties in the visible region.