Simple low voltage, low power implementations of circuits for V<inf>T</inf> extraction

Abstract

Two simple implementations of circuits to extract V T are introduced. They are independent of body effect and operate on a single supply voltage V DD of less than two gate-source drops. Experimental and simulation results verify the circuit operation with a power dissipation P=60µA and with single supply V DD =1.4V in 0.5µm CMOS technology and with variations of the extracted threshold voltage of less than 0.2mV for V DD changing from 1.4V to 2.5V.