Abstract
Ion beam deceleration properties of a newly developed low-energy ion beam implantation system were studied. The objective of this system was to produce general purpose low-energy (5 to 15 keV) implantations with high current beam of hundreds of μA level, providing the most wide implantation area possible and allowing continuously magnetic scanning of the beam over the sample(s). This paper describes the developed system installed in the high-current ion implanter at the Laboratory of Accelerators and Radiation Technologies of the Nuclear and Technological Cam-pus, Sacavem, Portugal (CTN).
Highlights
Low energy ion implantation became very important nowadays, either on microelectronics technology, thin film studies or plasma-wall studies in fusion reactors
Positive beam deceleration is performed by applying a positive voltage to the target (VA), in order to create an axial electric field in the opposite direction of propagation of the ion beam (E)
Using the developed system was possible to perform implantations at 5 keV energy continuously scanning of the ion beam over an area of 10 × 10 cm2 with accuracy for a general purpose low-energy implantation system
Summary
Low energy ion implantation became very important nowadays, either on microelectronics technology, thin film studies or plasma-wall studies in fusion reactors. Traditional ion deceleration uses a system that includes an electrostatic Einzel lens to focus and a target disk to decelerate the ion beam [1]-[3]. The objective of the described work was to develop a system to focus and decelerate a positive ion beam, keeping magnetic scanning of the beam possible. With this system the high-current ion implanter installed at the Nuclear and Technological Campus, can make implantation from less than 5 to 210 keV. (2015) Simple General Purpose Ion Beam Deceleration System Using a Single Electrode Lens.
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