Abstract
A two-step colloidal lithography process (Langmuir–Blodgett dip coating + reactive ion etching) was developed to fabricate single and double-sided moth-eye structures in Si, Ge, and GaAs for antireflection applications in the IR. Large increases in transmittance were obtained in all three material platforms (up to 97% single-side and 91% absolute transmittance) over the λ = 4−20+ μm region. Effective medium theory and the transfer matrix method were used to predict IR optical response of moth-eye substrates as well as investigate the effect of protuberance shape on antireflectance behavior. Overall, it is demonstrated that colloidal lithography and etching provide an easy and generic way to synthesize moth-eyes in different IR material platforms.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
