Abstract
Donors in silicon can now be positioned with an accuracy of about one lattice constant, making it possible to form donor arrays for quantum computation or quantum simulation applications. However, the multivalley character of the silicon conduction band combines with central cell corrections to the donor states to convert small atomic scale imperfections in donor placement into strong interdonor hybridization disorder. We present a simple model that is able to account for central cell corrections accurately, and use it to assess the impact of donor positional disorder on donor array properties in both itinerant and localized limits. Our results show that donor arrays in silicon simulate strongly disordered one-dimensional electrons.
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