Abstract
Silylation process is one of the most attractive surface imaging techniques for deep-UV lithography. We demonstrate the quarter micron pattern fabrication by using KrF excimer laser (248nm) lithography with surface imaging such as silylation process. Furthermore, by combining silylation process with the phase-shifting mask, it can be expected that the excellent resolution and focus latitude are obtained. In fact, experimental results exhibit below quarter micron pattern resolution with large depth of focus. The developed surface imaging technology is very promising for the fabrication of 256MDRAM.
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