Abstract
Silylation process is one of the most attractive surface imaging techniques for deep-UV lithography. We demonstrate the quarter micron pattern fabrication by using KrF excimer laser (248nm) lithography with surface imaging such as silylation process. Furthermore, by combining silylation process with the phase-shifting mask, it can be expected that the excellent resolution and focus latitude are obtained. In fact, experimental results exhibit below quarter micron pattern resolution with large depth of focus. The developed surface imaging technology is very promising for the fabrication of 256MDRAM.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
