Abstract
Room-temperature Ag photodoping into crystalline Al-doped ZnSe grown by molecular-beam epitaxy (MBE) has been achieved. A promising approach to apply to a patterned white light emitter has also been proposed. An Al–ZnSe with Ag islands was illuminated with a HeCd laser at 300 K and annealed in the MBE chamber. Then, their photoluminescence characteristics were measured in real time. The self-activated (SA) emission, observed in as-grown Al–ZnSe, undergoes a considerable change in intensity and band energy position through Ag photodoping and subsequent annealing. The resultant emission bands centered at 2.145 eV and 2.250 eV are assigned as a donor-to-acceptor pair transition related with Ag impurities rather than SA centers. In addition, chromaticity can be controlled by an adjustment of photoirradiated Ag-doped area.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
