Abstract
Improving the performance of resistive switching memories, while providing high transparency and excellent mechanical stability, has been of great interest because of the emerging need for electronic wearable devices. However, it remains a great challenge to fabricate fully flexible and transparent resistive switching memories because not enough research on flexible and transparent electrodes, for their application in resistive switching memories, has been conducted. Therefore, it has not been possible to obtain a nonvolatile memory with commercial applications. Recently, an electrode composed of a networked structure of Ag nanowires (AgNWs) embedded in a polymer, such as colorless polyimide (cPI), has been attracting increasing attention because of its high electrical, optical, and mechanical stability. However, for an intended use as a transparent electrode and substrate for resistive switching memories, it still has the crucial disadvantage of having a limited surface coverage of conductive pathways. Here, we introduce a novel approach to obtain a AgNWs/cPI composite electrode with a high figure-of-merit, mechanical stability, surface smoothness, and abundant surface coverage of conductive networks. By employing the fabricated electrodes, a flexible and transparent resistive memory could be successfully fabricated.
Highlights
Improving the performance of resistive switching memories, while providing high transparency and excellent mechanical stability, has been of great interest because of the emerging need for electronic wearable devices
In order to investigate the areas of exposed nanowires on the Ag nanowires (AgNWs)/colorless polyimide (cPI) composite, we immersed the composite electrodes in a Cu electroless plating solution without employing any preprocessing such as forming seed materials on the surface of the samples
Flexible and transparent electrodes comprising of a percolated network of AgNWs embedded at the surface of cPI were fabricated
Summary
Improving the performance of resistive switching memories, while providing high transparency and excellent mechanical stability, has been of great interest because of the emerging need for electronic wearable devices. These emerging memories store information based on the bistability of materials by taking advantage of changes in their physical properties Among these memories, RRAMs are considered one of the best candidates for the development of next-generation nonvolatile memory devices due to their fast switching speed, low energy consumption, excellent endurance, long retention, and simple metal-insulator-metal structure[1, 2]. In order to fabricate highly transparent RRAM devices, wide band-gap resistance change materials sandwiched between transparent conductive electrodes are necessary[6,7,8,9] In this respect, TiO2-based RRAMs have attracted attention because of their excellent electrical performance, transparent characteristics in the visible-light spectrum, as well as superior mechanical flexibility[10, 11]. These properties have prompted their use in flexible and transparent RRAMs (FT-RRAMs)
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