Abstract
Abstract Thin-film transistors (TFT) are an important component of many printed electronics, as they greatly influence the performance of the device. Thus, optimum performance of a TFT is considered to be the most important factor in an electronic application field. This paper reports the enhanced performance of an organic TFT (OTFT) by a facile inkjet etching method for the first time. Thermally evaporated Ag with a thickness of 20–80 nm is used for the source–drain electrode. By employing temperature control and adopting a proper thickness of silver electrode, the source-drain patterning is improved and optimized for the fine pattern with accuracy of 50 μm-channel without residue. Accordingly, the field-effect mobility is enhanced to 0.454 cm2/V and the on/off current ratio is greater than 105. Furthermore, the fabricated OTFT with etched Ag electrode demonstrates more uniform electrical stability than printed Ag electrode.
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