Abstract

We report a relatively simple process for fast nano-texturing of p-type (100) silicon surface using silver catalyzed wet chemical etching in aqueous hydrofluoric acid and hydrogen peroxide solution at room temperature. In this approach, a fine textured black surface was achieved in about 15–30s duration with reflectivity less than 4% in 400–1000nm range. The reflectivity versus texturization time has been investigated and co-related with morphological characteristics of the nano-textured-silicon (nT-Si) surfaces. The nano-texturization process is also applicable in multi-crystalline silicon. Further, n+–p–p+ structured solar cells have been fabricated on such nT-Si substrates following the standard fabrication protocol. Significant improvement in short circuit current density (>20%) and efficiency (∼1.25% absolute) has been achieved compared with planar control cell without deterioration of other performance parameters (such as open circuit voltage and fill factor). Light beam induced current measurements have also been carried out to show the spatial distribution of the light trapping and current in the planar and the nT-Si solar cells.

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