Abstract
Comparative characteristics of M/PPX/ITO memristors based on poly-n-xylylene (PPX) with a bottom electrode made of a conductive layer of indium–tin oxide (ITO) and a top active electrode made of copper, silver or their alloy of various compositions (M = Cu, Ag or Ag–Cu). The research results demonstrate that the most stable memristive characteristics are possessed by structures with top electrodes of pure metals.
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