Si<inf>0.5</inf>Ge<inf>0.5</inf> Single and Hetero-gate dielectric doping-less tunnel FETs

Abstract

In this paper, a two dimensional charge plasma based Single and hetero-gate dielectric Si 0.5 Ge 0.5 doping-less tunnel field effect transistor (DL-TFET) is reported. Further, a comparative analysis of Si Single and hetero-gate dielectric DL-TFETs with Si 0.5 Ge 0.5 Single and hetero-gate dielectric DL-TFETs are also presented for better understanding. The proposed Si 0.5 Ge 0.5 DL-TFETs shows an improved performance in terms of Ion, reduced subthreshold swing and it omits the use of any type of doping to form source and drain regions. An appropriate choice of metal electrode work function forms source and drain regions using charge plasma technique. As reported in earlier works of DL-TFETs are free from random dopant fluctuations (RDF's), which cuts off the cost for high temperature doping and annealing process, the proposed device is an addition to low cost and low power device applications.