Abstract
physica status solidi (a)Volume 78, Issue 2 p. K151-K154 Short Note Silicon-nickel silicide Schottky barriers formed by ion mixing N. N. Gerasimenko, N. N. Gerasimenko Institute of Semiconductor Physics, Academy of Sciences of the USSR, Siberian Branch, Novosibirsk Search for more papers by this authorA. E. Gershinskii, A. E. Gershinskii Institute of Semiconductor Physics, Academy of Sciences of the USSR, Siberian Branch, Novosibirsk Search for more papers by this authorA. Yu. Surtaev, A. Yu. Surtaev Institute of Semiconductor Physics, Academy of Sciences of the USSR, Siberian Branch, Novosibirsk Search for more papers by this authorS. A. Sokolov, S. A. Sokolov Institute of Semiconductor Physics, Academy of Sciences of the USSR, Siberian Branch, Novosibirsk Search for more papers by this authorE. I. Cherepov, E. I. Cherepov Institute of Semiconductor Physics, Academy of Sciences of the USSR, Siberian Branch, Novosibirsk Search for more papers by this authorB. I. Fomin, B. I. Fomin Institute of Semiconductor Physics, Academy of Sciences of the USSR, Siberian Branch, Novosibirsk Search for more papers by this authorG. V. Timofeeva, G. V. Timofeeva Institute of Semiconductor Physics, Academy of Sciences of the USSR, Siberian Branch, Novosibirsk Search for more papers by this author N. N. Gerasimenko, N. N. Gerasimenko Institute of Semiconductor Physics, Academy of Sciences of the USSR, Siberian Branch, Novosibirsk Search for more papers by this authorA. E. Gershinskii, A. E. Gershinskii Institute of Semiconductor Physics, Academy of Sciences of the USSR, Siberian Branch, Novosibirsk Search for more papers by this authorA. Yu. Surtaev, A. Yu. Surtaev Institute of Semiconductor Physics, Academy of Sciences of the USSR, Siberian Branch, Novosibirsk Search for more papers by this authorS. A. Sokolov, S. A. Sokolov Institute of Semiconductor Physics, Academy of Sciences of the USSR, Siberian Branch, Novosibirsk Search for more papers by this authorE. I. Cherepov, E. I. Cherepov Institute of Semiconductor Physics, Academy of Sciences of the USSR, Siberian Branch, Novosibirsk Search for more papers by this authorB. I. Fomin, B. I. Fomin Institute of Semiconductor Physics, Academy of Sciences of the USSR, Siberian Branch, Novosibirsk Search for more papers by this authorG. V. Timofeeva, G. V. Timofeeva Institute of Semiconductor Physics, Academy of Sciences of the USSR, Siberian Branch, Novosibirsk Search for more papers by this author First published: 16 August 1983 https://doi.org/10.1002/pssa.2210780260Citations: 1 prospekt Nauki 13, 630090 Novosibirsk, USSR. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Citing Literature Volume78, Issue216 August 1983Pages K151-K154 RelatedInformation
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