Abstract
The effect of photon annealing on the occurrence of deformations in the crystal structure of boron−doped silicon wafers produced by the Czochralski (Cz−Si) was studied by the method of triple−X−ray diffraction. It was found that the traditional annealing of silicon wafers with polished surfaces on both sides by halogen lamps in Photonic Annealing (PA) and rapid thermal annealing modes (RTA) leads to compression deformation. The same process with the use of original photo− mask, which allows local processing produces multiple, spatially separated regions of the plate produced by Lосаl Photonic Annealing (LPA) at relatively low temperatures (less than 55 °C), gives rise to a tensile strain. This established effect is not observed if on the back side of the plates there is mechanical gettering layer. The mechanism explaining the experimental results can be used in the formation of the charge pump in the structure of the photo electric converters (PEC).
Highlights
Oxygen precipitation within denuded zone founded by rapid thermal processing in Czochralski silicon wafers // Chinese Phys
The effect of photon annealing on the occurrence of deformations in the crystal structure of boron−doped silicon wafers produced by the Czochralski (Cz−Si) was studied by the method of triple−X−ray diffraction
It was found that the traditional annealing of silicon wafers with polished surfaces on both sides by halogen lamps in Photonic Annealing (PA) and rapid thermal annealing modes (RTA) leads to compression deformation
Summary
Методом трехкристальной рентгеновской дифрактометрии исследовано влияние фотонного отжига на возникновение деформаций в кристаллической структуре легированных бором кремниевых пластин, полученных по методу Чохральского (Cz−Si). Установлено, что традиционный отжиг всей поверхности двусторонне полированных пластин кремния галогенными лампами (режим фотонного отжига) в режимах быстрого термического отжига приводит к возникновению деформаций сжатия. К этому же можно отнести и отжиг термодонорных дефектов, характерных для сильнолегированных бором кремниевых пластин, полученных по методу Чохральского [5]. Образец 3 вырезали из n−типа проводимости было предложено использо- другой пластины, представляющей односторонне вать для создания зарядовых насосов в p−базовой полированную кремниевую пластину, на тыльной области ФЭП [9,10,11,12,13,14]. +2,913 ⋅ 10−5 механических напряжений, возникающих при БТО пластин кремния с различной обработкой поверхно- 3 сти в двух режимах: фотонного от-.
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