Abstract
We have developed silicon epitaxial wafers with high gettering capability using hydrocarbon molecular ion implantation for advanced Complementary Metal-Oxide-Semiconductor (CMOS) image sensors. These wafers have three unique silicon wafer characteristics for improvement of CMOS device electrical parameter such as high metallic impurity gettering, oxygen out-diffusion barrier effects from Czochralski silicon (CZ) substrate and hydrogen passivation effect for interface state defect at Si/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . We demonstrate that double epitaxial growth silicon wafers have an extremely high gettering capability during CMOS device fabrication process. We also found that gettering capability strongly dependence on oxygen impurity amount in hydrocarbon molecular ion implantation projection range. We believe that this novel silicon wafer can drastically contribute to the improvement of CMOS image sensor device performance such as white spot defect and dark current.
Highlights
Complementary metal-oxide-semiconductor (CMOS) image sensors have widely been used in internet of thinking (IoT) devices such as smartphones, smart watch and personal computer tablets [1]
We demonstrate that the unique characteristics of this novel silicon wafers has high gettering capability and the passivation effect on interface state defects in CMOS image sensor fabrication
We demonstrated that double epitaxial growth silicon wafers have a very high gettering capability during CMOS image sensor fabrication
Summary
Complementary metal-oxide-semiconductor (CMOS) image sensors have widely been used in internet of thinking (IoT) devices such as smartphones, smart watch and personal computer tablets [1]. Y.Koga are with SUMCO Corporation, Imari, Saga 849-4256, Japan. Kuroi et al, proposed that proximity gettering sinks formed under device active regions using a mega-electron-volt high energy ion implantation technique in the CMOS device fabrication process [8]. The first is, its very high gettering capability for metallic impurities in the pixel active region during CMOS image sensor fabrication process [12][13]. We demonstrate that the unique characteristics of this novel silicon wafers has high gettering capability and the passivation effect on interface state defects in CMOS image sensor fabrication. We propose a solution to 3D-CIS fabrication issues by designing a silicon wafer gettering technique using hydrocarbon-molecular-ion-implantation to achieve a high-functional performance of advanced CMOS image sensors
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