Abstract
Ring resonators on silicon rich nitride for potential use as rare-earth doped amplifiers pumped at 1310 nm with amplification at telecommunications-band are designed and characterized. The ring resonators are fabricated on 300 nm and 400 nm silicon rich nitride films and characterized at both 1310 nm and 1550 nm. We demonstrate ring resonators exhibiting similar quality factors exceeding 10,000 simultaneously at 1310 nm and 1550 nm. A Dysprosium-Erbium material system exhibiting photoluminescence at 1510 nm when pumped at 1310 nm is experimentally demonstrated. When used together with Dy-Er co-doped particles, these resonators with similar quality factors at 1310 nm and 1550 nm may be used for O-band pumped amplifiers for the telecommunications-band.
Highlights
The discovery of rare earth doped fiber amplifiers two decades ago resulted in the proliferation of the 1310 nm and 1550 nm wavelengths in telecommunications[1, 2]
A big advantage of implementing a resonant enhanced waveguide amplifier system using this rare earth doped material system lies it the much smaller wavelength spacing between the pump and signal, and the aforementioned issues associated with the 980 nm/1550 nm system are less severe
We demonstrate ring resonators fabricated in silicon rich nitride waveguides which are single mode at 1550 nm, but which support multiple modes at 1310 nm
Summary
The discovery of rare earth doped fiber amplifiers two decades ago resulted in the proliferation of the 1310 nm and 1550 nm wavelengths in telecommunications[1, 2]. Ways to achieve light amplification in silicon PIC includes hybrid integrating III-V semiconductor gain media with silicon photonic devices[5,6,7,8,9] and waveguide amplifiers utilizing rare-earth-ions doped dielectric materials as the waveguide core[10,11,12,13,14,15] or cladding[16, 17]. With regards to optical amplifiers, ring resonators could be used to reduce the pump power required for signal amplification. A big advantage of implementing a resonant enhanced waveguide amplifier system using this rare earth doped material system lies it the much smaller wavelength spacing between the pump and signal, and the aforementioned issues associated with the 980 nm/1550 nm system are less severe. These resonators are ideal for use as low power, resonant assisted waveguide amplifiers pumped at 1310 nm
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