Abstract
AbstractMost neutron detectors use some type of conversion material to convert the incident neutrons into secondary charged particles, which can be detected inside the detector bulk afterwards. In these reactions, charged particles and recoil nuclei are emitted, with energies high enough to be distinguished from the gamma ray background. In this way, semiconductor detectors incorporating a layer of a neutron reactive material on top of the substrate can be used as neutron detectors. Based on their experience in the fabrication of radiation detectors, CNM‐IMB (National Center of Microelectronics in Barcelona, Spain) has started a new research line in solid‐state neutron detectors for imaging or dosimetry. The Geant4 Monte–Carlo simulation package has been used to predict the detection efficiency of planar silicon detectors with a neutron converter layer. At the same time, preliminary tests of silicon pad detectors covered with neutron converters have been carried out in the Autonomous University of Barcelona with a neutron source (241Am‐Be). Copyright © 2010 John Wiley & Sons, Ltd.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.