Abstract
Neutron transmission imaging is recently finding still larger variety of applications. The development of reliable neutron-detecting device is essential for the high-quality imaging. However, such neutron imaging detectors have been prepared usually based on CCD cameras. Recently, first semiconductor detectors with neutron converter layers are beginning to appear. GaAs-based structures are presently under investigation as the substrate for neutron converter layer coated detectors of fast neutrons. Two new neutron converter layers (primer & rubber based), similar to HDPE (high-density polyethylene) were designed, prepared and tested via 239PuBe radioisotope neutron source.
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