Abstract
Abstract The piezoresistive effect in silicon has been extensively studied in this work. The Π11, Π2 and Π44 piezoresistive coefficients for both n-type and p-type silicon, respectively, have been analytically developed including the carrier transfer effect, the intravalley-intervalley scattering effects and the stress-induced effective mass variations. The contribution of the band-gap change due to the stress has been found to be important when the populations of electrons and holes are comparable. By introducing the quantum effect, the bulk modelling has been successfully extended to MOSFET devices. A good agreement between simulation and experiment has been achieved.
Published Version
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