Silicon photonic temperature sensor employing a ring resonator manufactured using a standard CMOS process

Abstract

An ultra-small integrated photonic temperature sensor has been proposed and demonstrated which incorporates a silicon ring resonator linked to a vertical grating coupler. It was manufactured using a 0.18 μm standard CMOS process, rendering a homogeneous integration into other electrical/optical devices. The temperature variation was measured by monitoring the shift in the resonant wavelength of the silicon resonator, which was induced by the thermo-optic effect and the thermal expansion effect. The dependence of its sensing capability upon the waveguide width of the resonator was intensively probed both theoretically and experimentally. The best achieved sensitivity was about 83 pm/°C for a waveguide width of 500 nm, while the sensitivity was boosted by ~10 pm/°C by adjusting the waveguide width from 300 nm to 500 nm. Finally, the response speed of the sensor was as fast as ~6 μs.