Abstract
Silicon p-n-I-M devices with thin insulating layers (thicknesses ⩽ 30 Å), named MTIS devices, have been developed. The two terminal device shows an S-shaped negative resistance characteristics similar to a Schockley diode (or p-n-p-n diode). Typically the threshold and sustaining voltages are 10 ∼ 15 and 1.3 ∼ 2 volts, respectively. The former however can be controlled by optical illumination. Turn-on time including delay is less than 2 nsec and turn-off time − 1 nsec or less. A thyristor-like device with its third terminal connected to the n-layer shows switching operation controllable by this terminal. A monolithic linear array of p-n-I-M diodes with 30 μm spacing operates as a shift register through coupling of adjacent diodes. Life of the two terminal devices recorded at present is over 1.5 × 104 hr. These devices can be applied to low power and high-speed electrical switching and also to optical switching and integrated logic circuits.
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