Abstract
In this study, we report on the growth and characterization of SiOxNy/Al films used as coating for static radiative cooling devices. Aluminum films were deposited by e-beam evaporation in high vacuum conditions. Silicon oxinitride overcoating aluminum was grown by RF reactive plasma sputtering in a mixed oxygen-nitrogen atmosphere. For the Rutherford backscattering spectroscopic (RBS) study, a carbon disc was the substrate. As for the highresolution electron-energy loss spectroscopy (HREELS) experiments, silicon substrates were used. RBS and HREELS studies showed that the silicon oxinitride/aluminum interface consists of two clearly distinct regions: one is a thin silicon nitride layer and the other one is aluminum oxide. This means that a dynamic phenomenon takes place at the interface. This phenomenon induces oxygen migration towards aluminum. Then the first silicon oxinitride monolayers are depleted in oxygen, leaving silicon nitride and forming a thin film of aluminum oxide.
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